Infineon IPD50R380CE: A High-Performance 500V CoolMOS™ Power Transistor for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge, the Infineon IPD50R380CE stands out as a premier 500V superjunction MOSFET (CoolMOS™), engineered to deliver exceptional performance in a wide array of switching applications, from server and telecom SMPS (Switch-Mode Power Supplies) to industrial motor drives and renewable energy systems.

At the core of this transistor's superiority is its remarkably low typical on-state resistance (R DS(on)) of just 38 mΩ at a 10V gate drive. This key parameter is crucial as it directly translates to minimized conduction losses. When the device is switched on, less energy is wasted as heat, leading to significantly higher overall system efficiency. This allows designers to either achieve more power output from a similarly sized system or to create more compact and lighter designs by reducing the need for extensive heat sinking.

Beyond its static performance, the IPD50R380CE excels in dynamic operation. The superjunction technology underpinning the CoolMOS™ family enables extremely low gate charge (Q G) and superior switching characteristics. The result is drastically reduced switching losses, especially during the critical turn-on and turn-off transitions. This is paramount for high-frequency operation, as it allows power supplies to operate at higher switching frequencies without a punitive efficiency penalty. Higher frequencies, in turn, enable the use of smaller passive components like transformers and inductors, further boosting power density.

The device is also designed with robustness and ease of use in mind. It features a highly avalanche rugged design, ensuring it can withstand unexpected voltage spikes and stressful conditions often encountered in real-world applications. Furthermore, its integrated fast body diode enhances its performance in bridge topologies, such as PFC (Power Factor Correction) stages, by improving reverse recovery behavior and reducing associated losses.

Housed in a TO-220 package, the IPD50R380CE offers a classic and widely adopted form factor that simplifies PCB layout and thermal management. Designers can leverage existing design expertise while achieving a substantial performance upgrade over standard MOSFETs.

ICGOO

ICGOODFIND: The Infineon IPD50R380CE is a benchmark component that masterfully balances ultra-low conduction loss, fast switching speed, and high robustness. It is an optimal choice for engineers aiming to push the boundaries of efficiency and power density in their 500V power conversion designs, ultimately leading to cooler, smaller, and more reliable end products.

Keywords: CoolMOS™, Low R DS(on), High Efficiency, Superjunction MOSFET, Fast Switching