Infineon IRF9358TRPBF P-Channel Power MOSFET: Datasheet, Pinout, and Application Circuits

The Infineon IRF9358TRPBF is a robust P-Channel Power MOSFET engineered for high-efficiency power management applications. Utilizing Infineon's advanced proprietary process technology, this component is designed to deliver low on-state resistance (RDS(on)) and high switching performance, making it an ideal choice for a wide range of power control tasks, from load switching to power supply conversion.

Datasheet Overview: Key Specifications

The datasheet for the IRF9358TRPBF outlines its critical electrical characteristics and absolute maximum ratings. Key specifications include a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -12A, suitable for many medium-power applications. A standout feature is its exceptionally low RDS(on) of just 19mΩ (max at VGS = -10V), which minimizes conduction losses and improves overall system efficiency. The device is also characterized by its high threshold voltage, which provides good noise immunity, and its operation is enhanced by a low gate charge, facilitating simple drive circuit design.

Pinout Configuration

The IRF9358TRPBF is offered in the industry-standard DPAK (TO-252) surface-mount package. The pinout is straightforward:

Pin 1 (Gate): This is the control pin. Applying a voltage relative to the source terminal turns the MOSFET on or off.

Pin 2 (Drain): The main terminal through which the load current flows out (for a P-Channel MOSFET in a high-side switch configuration).

Pin 3 (Source): This is the common reference point for both the load and the gate control voltage. The tab is also electrically connected to the source pin, which must be considered during mounting for heat sinking.

Application Circuits

The primary application for the IRF9358TRPBF is as a high-side load switch. This configuration is prevalent in systems like battery-powered devices, DC-DC converters, and motor control circuits, where power needs to be switched on and off for various subsystems.

1. Basic High-Side Switch:

In this fundamental circuit, the source is connected to the positive supply rail (e.g., +12V). The load (e.g., a motor, lamp, or another circuit) is connected between the drain and ground. A gate driver circuit, often a simple logic-level signal from a microcontroller, controls the MOSFET. To turn the MOSFET on, the gate is pulled to a voltage lower than the source by at least the threshold voltage (e.g., to 0V or GND). To turn it off, the gate is pulled up to the source voltage. A pull-up resistor is typically used on the gate to ensure the MOSFET turns off reliably.

2. Reverse Polarity Protection Circuit:

P-Channel MOSFETs are exceptionally effective for designing simple, low-loss reverse polarity protection. The IRF9358TRPBF is placed in the positive supply line with its source toward the power input and drain toward the protected circuit. The gate is tied to ground through a resistor. Under correct polarity, the inherent body diode is initially forward-biased, allowing current to flow. This creates the necessary gate-to-source voltage to turn the MOSFET fully on, bypassing the diode and minimizing voltage drop. If the polarity is reversed, the body diode and the MOSFET remain off, protecting the downstream circuitry.

3. DC-DC Converter (Synchronous Buck):

While less common than N-Channel pairs in modern buck converters, P-Channel MOSFETs like the IRF9358TRPBF can be used as the high-side switch in non-synchronous or simpler converter topologies. Its fast switching speed and low gate charge are beneficial for maintaining efficiency in these switching regulator applications.

ICGOODFIND Summary

The Infineon IRF9358TRPBF is a highly efficient and reliable P-Channel MOSFET, distinguished by its very low RDS(on) and strong current handling capability in a compact package. Its primary strength lies in simplifying high-side switching and providing robust reverse polarity protection with minimal power loss. For designers of power supplies, battery management systems, and general load control circuits, this component offers a perfect blend of performance, ease of use, and cost-effectiveness, making it a superior choice for a broad spectrum of power electronics applications.

Keywords:

P-Channel MOSFET

Power Management

High-Side Switch

Low RDS(on)

Reverse Polarity Protection