Infineon SMBTA06E6327 PNP Silicon Epitaxial Transistor: Datasheet, Pinout, and Application Circuit
The Infineon SMBTA06E6327 is a general-purpose PNP bipolar junction transistor (BJT) housed in a compact SOT-23 surface-mount package. Designed for high-efficiency switching and amplification in low-power applications, this epitaxial silicon transistor is a fundamental component in modern electronic design, offering a robust solution where space and performance are critical.
Datasheet Overview and Key Specifications
The transistor's datasheet provides essential parameters that define its operational limits and characteristics. Key absolute maximum ratings include a collector-emitter voltage (VCE) of -12 V and a collector current (IC) of -500 mA, making it suitable for a variety of low-voltage, moderate-current circuits. The device features a total power dissipation (Ptot) of 330 mW, which is typical for the SOT-23 package.
Its primary electrical characteristics highlight its performance. The DC current gain (hFE) is categorized into groups, typically offering a gain between 100 and 300 at specific conditions (e.g., IC = -150 mA, VCE = -1 V), ensuring good amplification capability. Furthermore, it boasts a low saturation voltage, which is crucial for efficient switching operations as it minimizes power loss in the on-state. The transition frequency is typically around 100 MHz, indicating its usefulness in low-frequency amplification and switching tasks.
Pinout Configuration
Correctly identifying the pinout is vital for circuit design. The SMBTA06E6327, in the SOT-23 package, has three pins. When viewing the component with the flat side facing towards you and the pins pointing downward:
Pin 1 (Emitter): This is the first pin on the left.
Pin 2 (Base): This is the center pin.
Pin 3 (Collector): This is the pin on the right.
Application Circuit Example: A Simple Switch
One of the most common uses for the SMBTA06E6327 is as a low-side switch to control a load such as an LED, relay, or small motor. The following circuit demonstrates this basic function.
Components:
Infineon SMBTA06E6327 (Q1)
Microcontroller or switch (S1)
Load (e.g., an LED with a series resistor, R_load)
Base resistor (R_base, e.g., 1 kΩ)
Power supply (VCC, e.g., 5V)
Circuit Operation:
1. The load (e.g., an LED and current-limiting resistor) is connected between the positive supply rail (VCC) and the collector of the transistor.
2. The emitter of the transistor is connected directly to ground.
3. A control signal from a microcontroller or a mechanical switch (S1) is connected to the base of the transistor through a current-limiting resistor (R_base).
4. When the control signal is LOW (0V), a small current flows from the base to the ground through the signal source, turning the transistor ON. This allows a much larger current to flow from the load, through the collector, to the emitter and to ground, thereby activating the load.
5. When the control signal is HIGH (e.g., 3.3V or 5V), the base-emitter junction is reverse-biased, and no base current flows. This turns the transistor OFF, stopping current flow through the load.
The value of R_base is calculated to provide sufficient base current to drive the transistor into saturation, ensuring minimal voltage drop across the collector and emitter.
ICGOODFIND Summary
The Infineon SMBTA06E6327 is a highly reliable PNP BJT excelling in switching and amplification roles within space-constrained, low-power designs. Its combination of a compact SOT-23 package, respectable current handling, and well-documented characteristics makes it an excellent choice for consumer electronics, automotive modules, and portable devices. Designers value it for its efficiency in controlling loads and simplifying circuit architecture.
Keywords:
PNP Transistor
SOT-23
Switching
Datasheet
Application Circuit
