Infineon IHW30N160R2: A Deep Dive into the 1600V 30A TRENCHSTOP™ IGBT7 Power Transistor

In the realm of high-power electronics, the demand for components that offer greater efficiency, higher power density, and superior reliability is unceasing. Addressing these challenges head-on, Infineon Technologies introduces the IHW30N160R2, a state-of-the-art IGBT7 Power Transistor that sets a new benchmark for performance in applications like industrial motor drives, renewable energy systems, and uninterruptible power supplies (UPS).

This device is engineered around Infineon's advanced TRENCHSTOP™ IGBT7 technology. The seventh generation of IGBTs represents a significant leap forward, primarily focusing on reducing application losses. A key innovation is the micro-pattern trench (MPT) technology within the chip. This design drastically minimizes the trade-off between on-state voltage (Vce(sat)) and turn-off losses (Eoff), a classic challenge in power semiconductor design. The result is a transistor that operates with remarkably low total losses, enabling higher switching frequencies or improved efficiency in existing designs.

The IHW30N160R2 is rated for 1600V and 30A, making it exceptionally suited for three-phase systems operating from 400V to 690V AC lines. Its robust voltage rating provides ample design headroom for handling voltage spikes and ensuring long-term operational stability. The device also features a very low saturation voltage of 1.55V (typical at 30A, 25°C), which directly translates to reduced conduction losses and cooler operation.

Beyond the IGBT itself, the package incorporates an optimized reverse conducting diode (Emitter Controlled 7 diode). This co-packaged diode is crucial for inverter-bridge leg configurations, offering soft reverse recovery characteristics that contribute to lower electromagnetic interference (EMI) and reduced switching losses in the system.

Other notable features include:

High short-circuit robustness (tSC = 5µs), enhancing system safety.

Positive temperature coefficient for straightforward parallelization, enabling use in higher-power modules.

The industry-standard TO-247plus housing, which offers superior creepage distances and facilitates better thermal management through its third contact (Kelvin Emitter), reducing switching losses caused by parasitic inductance.

ICGOOFind Summary: The Infineon IHW30N160R2 is a premier 1600V IGBT7 that exemplifies the pinnacle of power switching technology. By masterfully balancing ultra-low conduction and switching losses, it delivers unmatched efficiency and power density for demanding high-voltage applications. Its integration of a high-performance diode and robust mechanical design makes it a superior, future-proof choice for engineers designing the next generation of efficient and compact power conversion systems.

Keywords: IGBT7, TRENCHSTOP™, High Power Density, Low Losses, 1600V.