Infineon IPLU300N04S4-1R1: High-Performance 300A OptiMOS Power MOSFET

In the realm of power electronics, achieving high efficiency, robust performance, and thermal stability is paramount. The Infineon IPLU300N04S4-1R1 stands out as a premier solution, engineered to meet the rigorous demands of modern high-current applications. This OptiMOS power MOSFET is designed to deliver exceptional power density and superior switching performance, making it an ideal choice for applications such as server and telecom power supplies, industrial motor drives, and high-performance computing systems.

A key highlight of the IPLU300N04S4-1R1 is its impressive 300A continuous current rating with a low drain-source voltage (VDS) of 40V. This high current capability allows it to handle significant power levels without compromising reliability. The device leverages Infineon’s advanced OptiMOS technology, which significantly reduces switching and conduction losses. With an ultra-low typical on-state resistance (RDS(on)) of just 1.1mΩ, this MOSFET minimizes power dissipation, leading to higher efficiency and reduced thermal stress. This characteristic is critical for improving overall system efficiency and lowering operational temperatures.

The MOSFET is housed in an S4 (SuperSO8) package, which offers an excellent balance between compact size and thermal performance. This packaging technology enhances heat dissipation, allowing the device to operate effectively even under high-load conditions. Moreover, the IPLU300N04S4-1R1 is designed with a focus on reliability and longevity, featuring high robustness against thermal cycling and superior avalanche ruggedness.

Another notable advantage is its optimized gate charge (Qg), which ensures fast switching transitions. This reduces switching losses and enables higher frequency operation, contributing to more compact and lighter power design solutions. The combination of low RDS(on) and low Qg makes this MOSFET highly efficient across a wide range of operating conditions.

ICGOOODFIND: The Infineon IPLU300N04S4-1R1 sets a high benchmark in power MOSFET technology with its high current handling, minimal losses, and excellent thermal properties, making it a top-tier component for next-generation power systems.

Keywords:

OptiMOS Technology

High Current Rating

Low RDS(on)

Thermal Performance

Power Efficiency